Preferentially oriented growth of diamond films on silicon with nickel interlayer

Preferentially oriented growth of diamond films on silicon with nickel interlayer

Abstract A multistep deposition technique is developed to produce highly oriented diamond films by hot filament chemical vapor deposition (HFCVD) on Si (111) substrates. The orientation is produced by use of a thin, 5–20 nm, Ni interlayer. Annealing studies demonstrate diffusion of Ni into Si to for...

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Bibliographic Details
Main Authors: Anupam K.C., Anwar Siddique, Jonathan Anderson, Rony Saha, Chhabindra Gautam, Anival Ayala, Chris Engdahl, Mark W. Holtz, Edwin L. Piner
Format: Article
Language:English
Published: Springer 2022-07-01
Series:SN Applied Sciences
Subjects:
CVD diamond
Oriented growth
Texture
Graphitic co-deposition
Raman spectroscopy
X-ray diffraction
Online Access:https://doi.org/10.1007/s42452-022-05092-y

Internet

https://doi.org/10.1007/s42452-022-05092-y

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