Surface Localization of Buried III–V Semiconductor Nanostructures

<p>Abstract</p> <p>In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match thei...

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Bibliographic Details
Main Authors: Alonso-Gonz&#225;lez P, Gonz&#225;lez L, Fuster D, Mart&#237;n-S&#225;nchez J, Gonz&#225;lez Yolanda
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://dx.doi.org/10.1007/s11671-009-9329-3