Surface Localization of Buried III–V Semiconductor Nanostructures
<p>Abstract</p> <p>In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match thei...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2009-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://dx.doi.org/10.1007/s11671-009-9329-3 |