Surface Localization of Buried III–V Semiconductor Nanostructures
<p>Abstract</p> <p>In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match thei...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2009-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-009-9329-3 |
| _version_ | 1797708424039890944 |
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| author | Alonso-González P González L Fuster D Martín-Sánchez J González Yolanda |
| author_facet | Alonso-González P González L Fuster D Martín-Sánchez J González Yolanda |
| author_sort | Alonso-González P |
| collection | DOAJ |
| description | <p>Abstract</p> <p>In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the cap layer thickness explored (from 25 to 100 nm). The correspondence between these mounds and the buried nanostructures is confirmed by posterior selective strain-driven formation of new nanostructures on top of them, when the distance between the buried and the superficial nanostructures is short enough (<it>d</it> = 25 nm).</p> |
| first_indexed | 2024-03-12T06:21:17Z |
| format | Article |
| id | doaj.art-e103975da20549abb243fe069eb2b881 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:21:17Z |
| publishDate | 2009-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-e103975da20549abb243fe069eb2b8812023-09-03T02:12:48ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-0148873877Surface Localization of Buried III–V Semiconductor NanostructuresAlonso-González PGonzález LFuster DMartín-Sánchez JGonzález Yolanda<p>Abstract</p> <p>In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the cap layer thickness explored (from 25 to 100 nm). The correspondence between these mounds and the buried nanostructures is confirmed by posterior selective strain-driven formation of new nanostructures on top of them, when the distance between the buried and the superficial nanostructures is short enough (<it>d</it> = 25 nm).</p>http://dx.doi.org/10.1007/s11671-009-9329-3Droplet epitaxyIII–V Semiconductor nanostructuresMBE |
| spellingShingle | Alonso-González P González L Fuster D Martín-Sánchez J González Yolanda Surface Localization of Buried III–V Semiconductor Nanostructures Nanoscale Research Letters Droplet epitaxy III–V Semiconductor nanostructures MBE |
| title | Surface Localization of Buried III–V Semiconductor Nanostructures |
| title_full | Surface Localization of Buried III–V Semiconductor Nanostructures |
| title_fullStr | Surface Localization of Buried III–V Semiconductor Nanostructures |
| title_full_unstemmed | Surface Localization of Buried III–V Semiconductor Nanostructures |
| title_short | Surface Localization of Buried III–V Semiconductor Nanostructures |
| title_sort | surface localization of buried iii 8211 v semiconductor nanostructures |
| topic | Droplet epitaxy III–V Semiconductor nanostructures MBE |
| url | http://dx.doi.org/10.1007/s11671-009-9329-3 |
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