Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance
In contrast to conventional forming gas annealing (FGA), high-pressure deuterium annealing (HPD) shows a superior passivation of dangling bonds on the Si/SiO<sub>2</sub> interface. However, research detailing the process optimization for HPD has been modest. In this context, this paper d...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-03-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/15/5/1960 |