Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance
In contrast to conventional forming gas annealing (FGA), high-pressure deuterium annealing (HPD) shows a superior passivation of dangling bonds on the Si/SiO<sub>2</sub> interface. However, research detailing the process optimization for HPD has been modest. In this context, this paper d...
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MDPI AG
2022-03-01
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| Online Access: | https://www.mdpi.com/1996-1944/15/5/1960 |
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| author | Dong-Hyun Wang Ja-Yun Ku Dae-Han Jung Khwang-Sun Lee Woo Cheol Shin Byung-Do Yang Jun-Young Park |
| author_facet | Dong-Hyun Wang Ja-Yun Ku Dae-Han Jung Khwang-Sun Lee Woo Cheol Shin Byung-Do Yang Jun-Young Park |
| author_sort | Dong-Hyun Wang |
| collection | DOAJ |
| description | In contrast to conventional forming gas annealing (FGA), high-pressure deuterium annealing (HPD) shows a superior passivation of dangling bonds on the Si/SiO<sub>2</sub> interface. However, research detailing the process optimization for HPD has been modest. In this context, this paper demonstrates the iterative impact of HPD for the better fabrication of semiconductor devices. Long-channel gate-enclosed FETs are fabricated as a test vehicle. After each cycle of the annealing, device parameters are extracted and compared depending on the number of the HPD. Based on the results, an HPD condition that maximizes on-state current (I<sub>ON</sub>) but minimizes off-state current (I<sub>OFF</sub>) can be provided. |
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| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T20:32:33Z |
| publishDate | 2022-03-01 |
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| spelling | doaj.art-e103e6530b9643f9abb942151faa725f2023-11-23T23:21:33ZengMDPI AGMaterials1996-19442022-03-01155196010.3390/ma15051960Impact of Iterative Deuterium Annealing in Long-Channel MOSFET PerformanceDong-Hyun Wang0Ja-Yun Ku1Dae-Han Jung2Khwang-Sun Lee3Woo Cheol Shin4Byung-Do Yang5Jun-Young Park6School of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaSchool of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaSchool of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaSchool of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, KoreaSchool of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaSchool of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaIn contrast to conventional forming gas annealing (FGA), high-pressure deuterium annealing (HPD) shows a superior passivation of dangling bonds on the Si/SiO<sub>2</sub> interface. However, research detailing the process optimization for HPD has been modest. In this context, this paper demonstrates the iterative impact of HPD for the better fabrication of semiconductor devices. Long-channel gate-enclosed FETs are fabricated as a test vehicle. After each cycle of the annealing, device parameters are extracted and compared depending on the number of the HPD. Based on the results, an HPD condition that maximizes on-state current (I<sub>ON</sub>) but minimizes off-state current (I<sub>OFF</sub>) can be provided.https://www.mdpi.com/1996-1944/15/5/1960annealingforming gas annealinggate-enclosed MOSFEThigh pressure deuterium annealingpost metal annealing |
| spellingShingle | Dong-Hyun Wang Ja-Yun Ku Dae-Han Jung Khwang-Sun Lee Woo Cheol Shin Byung-Do Yang Jun-Young Park Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance Materials annealing forming gas annealing gate-enclosed MOSFET high pressure deuterium annealing post metal annealing |
| title | Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance |
| title_full | Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance |
| title_fullStr | Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance |
| title_full_unstemmed | Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance |
| title_short | Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance |
| title_sort | impact of iterative deuterium annealing in long channel mosfet performance |
| topic | annealing forming gas annealing gate-enclosed MOSFET high pressure deuterium annealing post metal annealing |
| url | https://www.mdpi.com/1996-1944/15/5/1960 |
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