Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rat...

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Bibliographic Details
Main Authors: Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Jutta Schwarzkopf, Andreas Popp
Format: Article
Language:English
Published: AIP Publishing LLC 2021-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0069243

Internet

http://dx.doi.org/10.1063/5.0069243

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