Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rat...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0069243 |
| _version_ | 1818682512201744384 |
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| author | Ta-Shun Chou Palvan Seyidov Saud Bin Anooz Raimund Grüneberg Thi Thuy Vi Tran Klaus Irmscher Martin Albrecht Zbigniew Galazka Jutta Schwarzkopf Andreas Popp |
| author_facet | Ta-Shun Chou Palvan Seyidov Saud Bin Anooz Raimund Grüneberg Thi Thuy Vi Tran Klaus Irmscher Martin Albrecht Zbigniew Galazka Jutta Schwarzkopf Andreas Popp |
| author_sort | Ta-Shun Chou |
| collection | DOAJ |
| description | A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rate and maintain the step-flow growth mode, wherein the enhanced diffusion channel due to the formation of a Ga adlayer was proposed to be the possible growth mechanism. Si doping allowed precise control of the n-type conductivity of the films with electron concentrations ranging from 1.5 × 1017 to 1.5 × 1019 cm−3 and corresponding mobilities from 144 to 21 cm2 V−1 s−1, as revealed by Hall effect measurements at room temperature. Secondary ion mass spectrometry confirmed homogeneous Si doping through the film and a one-to-one correlation between the Si concentration and the electron concentration. Low defect density in the films was determined by x-ray diffraction measurements. The demonstration of a high growth rate process of β-Ga2O3 films with μm level thickness and smooth surface morphology via MOVPE is critical for high power electronics with vertical device architecture. |
| first_indexed | 2024-12-17T10:20:01Z |
| format | Article |
| id | doaj.art-e1255397886d4803b88f3d7b688b2f68 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-17T10:20:01Z |
| publishDate | 2021-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-e1255397886d4803b88f3d7b688b2f682022-12-21T21:52:49ZengAIP Publishing LLCAIP Advances2158-32262021-11-011111115323115323-610.1063/5.0069243Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPETa-Shun Chou0Palvan Seyidov1Saud Bin Anooz2Raimund Grüneberg3Thi Thuy Vi Tran4Klaus Irmscher5Martin Albrecht6Zbigniew Galazka7Jutta Schwarzkopf8Andreas Popp9Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, GermanyA high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rate and maintain the step-flow growth mode, wherein the enhanced diffusion channel due to the formation of a Ga adlayer was proposed to be the possible growth mechanism. Si doping allowed precise control of the n-type conductivity of the films with electron concentrations ranging from 1.5 × 1017 to 1.5 × 1019 cm−3 and corresponding mobilities from 144 to 21 cm2 V−1 s−1, as revealed by Hall effect measurements at room temperature. Secondary ion mass spectrometry confirmed homogeneous Si doping through the film and a one-to-one correlation between the Si concentration and the electron concentration. Low defect density in the films was determined by x-ray diffraction measurements. The demonstration of a high growth rate process of β-Ga2O3 films with μm level thickness and smooth surface morphology via MOVPE is critical for high power electronics with vertical device architecture.http://dx.doi.org/10.1063/5.0069243 |
| spellingShingle | Ta-Shun Chou Palvan Seyidov Saud Bin Anooz Raimund Grüneberg Thi Thuy Vi Tran Klaus Irmscher Martin Albrecht Zbigniew Galazka Jutta Schwarzkopf Andreas Popp Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE AIP Advances |
| title | Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE |
| title_full | Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE |
| title_fullStr | Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE |
| title_full_unstemmed | Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE |
| title_short | Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE |
| title_sort | fast homoepitaxial growth of 100 β ga2o3 thin films via movpe |
| url | http://dx.doi.org/10.1063/5.0069243 |
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