Influence of Hole Current Crowding on Snapback Breakdown in Multi-Finger MOSFETs

Influence of Hole Current Crowding on Snapback Breakdown in Multi-Finger MOSFETs

The snapback breakdown behavior of multi-finger MOSFETs was investigated using a device simulation. It is shown that snapback breakdown voltage (SNBV) varies depending on the source/drain configuration, even with the same two-finger structure. This results from the hole current crowding below the sh...

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Bibliographic Details
Main Authors: Siyoun Lee, Seong-Yeon Kim, Haesoon Oh, Jaesung Sim, Woo Young Choi
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Snapback breakdown
impact ionization
parasitic bipolar junction transistor (BJT)
pocket implantation
multi-finger MOSFET
Online Access:https://ieeexplore.ieee.org/document/10149319/

Internet

https://ieeexplore.ieee.org/document/10149319/

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