Steep Slope Field Effect Transistors Based on 2D Materials

Steep Slope Field Effect Transistors Based on 2D Materials

Abstract With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic li...

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Bibliographic Details
Main Authors: Laixiang Qin, He Tian, Chunlai Li, Ziang Xie, Yiqun Wei, Yi Li, Jin He, Yutao Yue, Tian‐Ling Ren
Format: Article
Language:English
Published: Wiley-VCH 2024-08-01
Series:Advanced Electronic Materials
Subjects:
2D materials
low power consumption
steep slope transistor
short channel effect
Online Access:https://doi.org/10.1002/aelm.202300625

Internet

https://doi.org/10.1002/aelm.202300625

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