Slurry Design for Chemical Mechanical Polishing
Chemical Mechanical Polishing (CMP) process is widely used in the microelectronics industry for planarization of metal and dielectric layers to achieve multi-layer metallization. For an effective polishing, it is necessary to minimize the surf...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Hosokawa Powder Technology Foundation
2014-03-01
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| Series: | KONA Powder and Particle Journal |
| Subjects: | |
| Online Access: | https://www.jstage.jst.go.jp/article/kona/21/0/21_2003020/_pdf/-char/en |
| _version_ | 1818462135768842240 |
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| author | G. Bahar Basim Brij M. Moudgil |
| author_facet | G. Bahar Basim Brij M. Moudgil |
| author_sort | G. Bahar Basim |
| collection | DOAJ |
| description | Chemical Mechanical Polishing (CMP) process is widely used in the microelectronics industry for planarization of metal and dielectric layers to achieve multi-layer metallization. For an effective polishing, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate. These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or in other words, by engineering the slurry chemistry, particulate properties and stability. This paper reviews the impact of chemical, inter-particle and pad-particle-substrate interactions on CMP performance. It is shown that for consistently high performing slurries, stability of abrasive particles must be achieved under the dynamic processing conditions by providing sufficient pad-particle-wafer interactions. |
| first_indexed | 2024-12-14T23:57:14Z |
| format | Article |
| id | doaj.art-e1a332f548734193a2b3387dd379eb1a |
| institution | Directory Open Access Journal |
| issn | 0288-4534 2187-5537 |
| language | English |
| last_indexed | 2024-12-14T23:57:14Z |
| publishDate | 2014-03-01 |
| publisher | Hosokawa Powder Technology Foundation |
| record_format | Article |
| series | KONA Powder and Particle Journal |
| spelling | doaj.art-e1a332f548734193a2b3387dd379eb1a2022-12-21T22:43:05ZengHosokawa Powder Technology FoundationKONA Powder and Particle Journal0288-45342187-55372014-03-0121017818410.14356/kona.2003020konaSlurry Design for Chemical Mechanical PolishingG. Bahar Basim0Brij M. Moudgil1Department of Materials Science and Engineering Particle Engineering Research CenterDepartment of Materials Science and Engineering Particle Engineering Research CenterChemical Mechanical Polishing (CMP) process is widely used in the microelectronics industry for planarization of metal and dielectric layers to achieve multi-layer metallization. For an effective polishing, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate. These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or in other words, by engineering the slurry chemistry, particulate properties and stability. This paper reviews the impact of chemical, inter-particle and pad-particle-substrate interactions on CMP performance. It is shown that for consistently high performing slurries, stability of abrasive particles must be achieved under the dynamic processing conditions by providing sufficient pad-particle-wafer interactions.https://www.jstage.jst.go.jp/article/kona/21/0/21_2003020/_pdf/-char/enchemical mechanical polishing (cmp)chemically altered thin filmsparticle sizeparticle size distributionslurry stabilityinteraction forces |
| spellingShingle | G. Bahar Basim Brij M. Moudgil Slurry Design for Chemical Mechanical Polishing KONA Powder and Particle Journal chemical mechanical polishing (cmp) chemically altered thin films particle size particle size distribution slurry stability interaction forces |
| title | Slurry Design for Chemical Mechanical Polishing |
| title_full | Slurry Design for Chemical Mechanical Polishing |
| title_fullStr | Slurry Design for Chemical Mechanical Polishing |
| title_full_unstemmed | Slurry Design for Chemical Mechanical Polishing |
| title_short | Slurry Design for Chemical Mechanical Polishing |
| title_sort | slurry design for chemical mechanical polishing |
| topic | chemical mechanical polishing (cmp) chemically altered thin films particle size particle size distribution slurry stability interaction forces |
| url | https://www.jstage.jst.go.jp/article/kona/21/0/21_2003020/_pdf/-char/en |
| work_keys_str_mv | AT gbaharbasim slurrydesignforchemicalmechanicalpolishing AT brijmmoudgil slurrydesignforchemicalmechanicalpolishing |