Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor (CMOS) back-end-of-line (BEOL) processing, due to their relatively low crystallization temperature. However, it remai...

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Bibliographic Details
Main Authors: Changfan Ju, Binjian Zeng, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao
Format: Article
Language:English
Published: Elsevier 2024-03-01
Series:Journal of Materiomics
Subjects:
Al2O3
BEOL processing
Ferroelectricity
Hf0.5Zr0.5O2 (HZO)
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847823001107

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http://www.sciencedirect.com/science/article/pii/S2352847823001107

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