Impact of oxygen on gallium doped germanium
Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for nanoelectronic applications. Understanding dopant–defect interactions is important to form well-defined doped regions for devices. Gallium (Ga) is a key p-type dopant in Ge. In the present density fun...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0054643 |