Nitrogenous Interlayers for ITO S/D Electrodes in N‐Type Organic Thin Film Transistors

Nitrogenous Interlayers for ITO S/D Electrodes in N‐Type Organic Thin Film Transistors

Abstract The commercialization of organic thin film transistors (OTFTs) is partly hindered by the high cost and stubborn work function (WF) of common Au source/drain (S/D) electrodes. In this work, indium tin oxide (ITO) S/D electrodes modified with three different nitrogenous interlayers including...

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Bibliographic Details
Main Authors: Xin Rong, Jiangli Han, Chenhui Xu, Botai Ma, Lixian Jiang, Ding Ma, Rubo Xing, Liping Shen, Lian Duan, Yunfeng Deng, Yanhou Geng, Guifang Dong
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Materials Interfaces
Subjects:
indium tin oxide
nitrogenous interlayers
organic thin film transistors
protonated amines
work function
Online Access:https://doi.org/10.1002/admi.202202059

Internet

https://doi.org/10.1002/admi.202202059

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