Optimal Growth Conditions for Forming <i>c</i>-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering

Optimal Growth Conditions for Forming <i>c</i>-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering

Aluminum nitride (AlN) thin-film materials possess a wide energy gap; thus, they are suitable for use in various optoelectronic devices. In this study, AlN thin films were deposited using radio frequency magnetron sputtering with an Al sputtering target and N<sub>2</sub> as the reactive...

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Bibliographic Details
Main Authors: Wei-Sheng Liu, Balaji Gururajan, Sui-Hua Wu, Li-Cheng Huang, Chung-Kai Chi, Yu-Lun Jiang, Hsing-Chun Kuo
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Micromachines
Subjects:
aluminum nitride
reactive sputtering
X-ray diffraction
X-ray photoelectron spectroscopy
hardness measurement
Online Access:https://www.mdpi.com/2072-666X/13/9/1546

Internet

https://www.mdpi.com/2072-666X/13/9/1546

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