SiO2/Si interface oxidation and defects in O2 plasma processing

SiO2/Si interface oxidation and defects in O2 plasma processing

The SiO _2 /Si interface oxidation and defects are studied in a low-pressure capacitively-coupled oxygen (O _2 ) plasma. The interface oxidation is clearly observed for a thinner SiO _2 layer under a high-energy ion’s irradiation condition for a long period of processing. The oxidation thickness is...

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Bibliographic Details
Main Authors: Shota Nunomura, Takayoshi Tsutsumi, Masaru Hori
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
plasma oxidation
SiO2/Si interface
interface defects
carrier lifetime
Online Access:https://doi.org/10.35848/1882-0786/adb007

Internet

https://doi.org/10.35848/1882-0786/adb007

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