Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO<sub>2</sub>) Devices via Sol-Gel Method Stacking Tri-Layer HfO<sub>2</sub>/Al-ZnO/HfO<sub>2</sub> Structures

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO<sub>2</sub>) Devices via Sol-Gel Method Stacking Tri-Layer HfO<sub>2</sub>/Al-ZnO/HfO<sub>2</sub> Structures

Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be...

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Bibliografski detalji
Glavni autori: Yuan-Dong Xu, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Zhenhua Tang, Wen-Hua Li, Xiao-Bin Guo, Yi-Chun Zhou
Format: Članak
Jezik:English
Izdano: MDPI AG 2022-12-01
Serija:Nanomaterials
Teme:
HfO<sub>2</sub>
Al-ZnO
sol–gel method
resistive switching
multi-level memory
conductive filament
Online pristup:https://www.mdpi.com/2079-4991/13/1/39

Internet

https://www.mdpi.com/2079-4991/13/1/39

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