Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling

Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling

Ultra-low power applications often require several kb of embedded memory and are typically operated at the lowest possible operating voltage (VDD) to minimize both dynamic and static power consumption. Embedded memories can easily dominate the overall silicon area of these systems, and their leakage...

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Bibliographic Details
Main Authors: Alexander Fish, Andreas Burg, Adam Teman, Robert Giterman, Pascal Meinerzhagen
Format: Article
Language:English
Published: MDPI AG 2013-04-01
Series:Journal of Low Power Electronics and Applications
Subjects:
embedded memory
gain cell
energy efficiency
subthreshold operation
near-threshold operation
retention time
access speed
technology scaling
Online Access:http://www.mdpi.com/2079-9268/3/2/54

Internet

http://www.mdpi.com/2079-9268/3/2/54

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