Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors

Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors

Research on elemental 2D materials has been experiencing a renaissance in the past few years. Of particular interest is tellurium (Te), which possesses many exceptional properties for nanoelectronics, photonics, and beyond. Nevertheless, the lack of a scalable approach for the thickness engineering...

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Bibliographic Details
Main Authors: Fangfang Chen, Dingwen Cao, Juanjuan Li, Yong Yan, Di Wu, Cheng Zhang, Lenan Gao, Zhaowei Guo, Shihong Ma, Huihui Yu, Pei Lin
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-10-01
Series:Frontiers in Chemistry
Subjects:
tellurene
oxidative etching
thickness engineering
field-effect transistors
polarizd infrared photodetection
Online Access:https://www.frontiersin.org/articles/10.3389/fchem.2022.1046010/full

Internet

https://www.frontiersin.org/articles/10.3389/fchem.2022.1046010/full

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