Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides
The electrical properties of MIS structures with rare-earth element fluorides on germanium substrates were studied to analyze the possibility of using these materials as gate dielectrics of devices. The structures are also studied from the point of view of assessing the degradation of their electrop...
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| Format: | Article |
| Language: | English |
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Povolzhskiy State University of Telecommunications & Informatics
2021-09-01
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| Series: | Физика волновых процессов и радиотехнические системы |
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| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/9359/8495 |
| _version_ | 1797382608505536512 |
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| author | Natalia V. Sachuk Margarita B. Shalimova |
| author_facet | Natalia V. Sachuk Margarita B. Shalimova |
| author_sort | Natalia V. Sachuk |
| collection | DOAJ |
| description | The electrical properties of MIS structures with rare-earth element fluorides on germanium substrates were studied to analyze the possibility of using these materials as gate dielectrics of devices. The structures are also studied from the point of view of assessing the degradation of their electrophysical properties under the action of electric fields of ~108 V/m, which act on the dielectric during electroforming, since the MIS structures with rare-earth element fluorides have the property of bistable switching. Studies of the I-V and C-V characteristics show that all structures have approximately the same value of the density of surface states at the rare-earth element / Ge fluoride interface. The leakage currents in the MIS structures with TmF3 and SmF3 film are less than in the MIS structures with NdF3 film of greater thickness. There is also no effect of reducing the current density when using the double film structure CeF3/DyF3. The most promising material with a low leakage current at a fairly high value of the dielectric constant in germanium MIS structures is thin-film samarium fluoride. |
| first_indexed | 2024-03-08T21:07:58Z |
| format | Article |
| id | doaj.art-e27b6b74335f4eaea14056dc84ebb622 |
| institution | Directory Open Access Journal |
| issn | 1810-3189 2782-294X |
| language | English |
| last_indexed | 2024-03-08T21:07:58Z |
| publishDate | 2021-09-01 |
| publisher | Povolzhskiy State University of Telecommunications & Informatics |
| record_format | Article |
| series | Физика волновых процессов и радиотехнические системы |
| spelling | doaj.art-e27b6b74335f4eaea14056dc84ebb6222023-12-22T10:31:41ZengPovolzhskiy State University of Telecommunications & InformaticsФизика волновых процессов и радиотехнические системы1810-31892782-294X2021-09-01242687210.18469/1810-3189.2021.24.2.68-728353Electrophysical characteristics of germanium MIS structures with rare-earth element fluoridesNatalia V. Sachuk0Margarita B. Shalimova1Samara National Research UniversitySamara National Research UniversityThe electrical properties of MIS structures with rare-earth element fluorides on germanium substrates were studied to analyze the possibility of using these materials as gate dielectrics of devices. The structures are also studied from the point of view of assessing the degradation of their electrophysical properties under the action of electric fields of ~108 V/m, which act on the dielectric during electroforming, since the MIS structures with rare-earth element fluorides have the property of bistable switching. Studies of the I-V and C-V characteristics show that all structures have approximately the same value of the density of surface states at the rare-earth element / Ge fluoride interface. The leakage currents in the MIS structures with TmF3 and SmF3 film are less than in the MIS structures with NdF3 film of greater thickness. There is also no effect of reducing the current density when using the double film structure CeF3/DyF3. The most promising material with a low leakage current at a fairly high value of the dielectric constant in germanium MIS structures is thin-film samarium fluoride.https://journals.ssau.ru/pwp/article/viewFile/9359/8495mis structurerare-earth element fluoridesgate dielectricdielectric degradation |
| spellingShingle | Natalia V. Sachuk Margarita B. Shalimova Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides Физика волновых процессов и радиотехнические системы mis structure rare-earth element fluorides gate dielectric dielectric degradation |
| title | Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides |
| title_full | Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides |
| title_fullStr | Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides |
| title_full_unstemmed | Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides |
| title_short | Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides |
| title_sort | electrophysical characteristics of germanium mis structures with rare earth element fluorides |
| topic | mis structure rare-earth element fluorides gate dielectric dielectric degradation |
| url | https://journals.ssau.ru/pwp/article/viewFile/9359/8495 |
| work_keys_str_mv | AT nataliavsachuk electrophysicalcharacteristicsofgermaniummisstructureswithrareearthelementfluorides AT margaritabshalimova electrophysicalcharacteristicsofgermaniummisstructureswithrareearthelementfluorides |