Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical pr...

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Bibliographic Details
Main Authors: In-Tae Hwang, Kyu-Won Jang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Jin-Mo Yang, Ho-Sang Kwon, Hyun-Seok Kim
Format: Article
Language:English
Published: MDPI AG 2019-09-01
Series:Applied Sciences
Subjects:
GaN
metal-insulator-semiconductor high electron mobility transistor
gate leakage current
two-dimensional electron gas
breakdown voltage
Online Access:https://www.mdpi.com/2076-3417/9/17/3610

Internet

https://www.mdpi.com/2076-3417/9/17/3610

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