| Summary: | This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si<sub>3</sub>N<sub>4</sub> dielectric layer. We then employed different Al<sub>2</sub>O<sub>3</sub> dielectric layer thicknesses on top of the Si<sub>3</sub>N<sub>4</sub>, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al<sub>2</sub>O<sub>3</sub> on a 5-nm Si<sub>3</sub>N<sub>4</sub> structure. Although the gate leakage current increased as Al<sub>2</sub>O<sub>3</sub> thickness increased to 35 nm, the breakdown voltage was improved.
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