Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical pr...
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MDPI AG
2019-09-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/9/17/3610 |
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| author | In-Tae Hwang Kyu-Won Jang Hyun-Jung Kim Sang-Heung Lee Jong-Won Lim Jin-Mo Yang Ho-Sang Kwon Hyun-Seok Kim |
| author_facet | In-Tae Hwang Kyu-Won Jang Hyun-Jung Kim Sang-Heung Lee Jong-Won Lim Jin-Mo Yang Ho-Sang Kwon Hyun-Seok Kim |
| author_sort | In-Tae Hwang |
| collection | DOAJ |
| description | This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si<sub>3</sub>N<sub>4</sub> dielectric layer. We then employed different Al<sub>2</sub>O<sub>3</sub> dielectric layer thicknesses on top of the Si<sub>3</sub>N<sub>4</sub>, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al<sub>2</sub>O<sub>3</sub> on a 5-nm Si<sub>3</sub>N<sub>4</sub> structure. Although the gate leakage current increased as Al<sub>2</sub>O<sub>3</sub> thickness increased to 35 nm, the breakdown voltage was improved. |
| first_indexed | 2024-12-13T08:06:15Z |
| format | Article |
| id | doaj.art-e2bf21e545154bd3857134026acb959e |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-12-13T08:06:15Z |
| publishDate | 2019-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-e2bf21e545154bd3857134026acb959e2022-12-21T23:54:18ZengMDPI AGApplied Sciences2076-34172019-09-01917361010.3390/app9173610app9173610Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating EffectIn-Tae Hwang0Kyu-Won Jang1Hyun-Jung Kim2Sang-Heung Lee3Jong-Won Lim4Jin-Mo Yang5Ho-Sang Kwon6Hyun-Seok Kim7Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, KoreaElectronics and Telecommunications Research Institute, Daejeon 34129, KoreaElectronics and Telecommunications Research Institute, Daejeon 34129, KoreaAgency for Defense Development, Daejeon 34186, KoreaAgency for Defense Development, Daejeon 34186, KoreaDivision of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, KoreaThis study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si<sub>3</sub>N<sub>4</sub> dielectric layer. We then employed different Al<sub>2</sub>O<sub>3</sub> dielectric layer thicknesses on top of the Si<sub>3</sub>N<sub>4</sub>, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al<sub>2</sub>O<sub>3</sub> on a 5-nm Si<sub>3</sub>N<sub>4</sub> structure. Although the gate leakage current increased as Al<sub>2</sub>O<sub>3</sub> thickness increased to 35 nm, the breakdown voltage was improved.https://www.mdpi.com/2076-3417/9/17/3610GaNmetal-insulator-semiconductor high electron mobility transistorgate leakage currenttwo-dimensional electron gasbreakdown voltage |
| spellingShingle | In-Tae Hwang Kyu-Won Jang Hyun-Jung Kim Sang-Heung Lee Jong-Won Lim Jin-Mo Yang Ho-Sang Kwon Hyun-Seok Kim Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect Applied Sciences GaN metal-insulator-semiconductor high electron mobility transistor gate leakage current two-dimensional electron gas breakdown voltage |
| title | Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect |
| title_full | Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect |
| title_fullStr | Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect |
| title_full_unstemmed | Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect |
| title_short | Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect |
| title_sort | analysis of dc characteristics in gan based metal insulator semiconductor high electron mobility transistor with variation of gate dielectric layer composition by considering self heating effect |
| topic | GaN metal-insulator-semiconductor high electron mobility transistor gate leakage current two-dimensional electron gas breakdown voltage |
| url | https://www.mdpi.com/2076-3417/9/17/3610 |
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