Exchange bias in Ba0.4Sr0.6TiO3/La0.7Sr0.3MnO3 heterostructures

This work relates to the integration of the two-layer stack of the proposed multiferroic structure onto silicon substrates. Ba1-xSrxTiO3 is an excellent material for room-temperature voltage-tunable dielectric applications due to its high (ε=6000) dielectric constant. In this study we choose a compo...

Full description

Bibliographic Details
Main Authors: Srinivasa Rao Singamaneni, John T. Prater, Jagdish Narayan
Format: Article
Language:English
Published: AIP Publishing LLC 2017-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4977071