A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules

A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules

Abstract Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub‐modules (SMs) condition monitoring. This paper proposes an integrated monitoring method for capacitance degradation and IGBT junction...

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Bibliographic Details
Main Authors: Wuyu Zhang, Lei Qi, Xiangyu Zhang, Bing Ji, Xiang Cui
Format: Article
Language:English
Published: Wiley 2023-09-01
Series:IET Power Electronics
Subjects:
capacitance
condition monitoring
insulated gate bipolar transistors
Online Access:https://doi.org/10.1049/pel2.12523

Internet

https://doi.org/10.1049/pel2.12523

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