A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules
Abstract Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub‐modules (SMs) condition monitoring. This paper proposes an integrated monitoring method for capacitance degradation and IGBT junction...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-09-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12523 |
| _version_ | 1797725703159939072 |
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| author | Wuyu Zhang Lei Qi Xiangyu Zhang Bing Ji Xiang Cui |
| author_facet | Wuyu Zhang Lei Qi Xiangyu Zhang Bing Ji Xiang Cui |
| author_sort | Wuyu Zhang |
| collection | DOAJ |
| description | Abstract Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub‐modules (SMs) condition monitoring. This paper proposes an integrated monitoring method for capacitance degradation and IGBT junction temperature variation. By measuring multiple characteristics of the same port voltage, the capacitance and the junction temperature can be obtained simultaneously, which greatly simplifies the measurement unit required for condition evaluation and realizes the submodule‐level condition monitoring at a lower cost. The capacitance is characterized by voltage changes during capacitor discharging and the junction temperature is monitored by capacitor voltage overshoot (peak value) during IGBT turn‐off. Theoretical analysis and experimental results verify the effectiveness of the proposed method and articulated the influence of load current, SM capacitor pre‐discharge voltage, and junction temperature. Moreover, an online data‐acquisition circuit for time‐specific capacitor voltage characterization is devised. |
| first_indexed | 2024-03-12T10:35:05Z |
| format | Article |
| id | doaj.art-e2deb3ee00de415fb1a3965b45a4cac2 |
| institution | Directory Open Access Journal |
| issn | 1755-4535 1755-4543 |
| language | English |
| last_indexed | 2024-03-12T10:35:05Z |
| publishDate | 2023-09-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Power Electronics |
| spelling | doaj.art-e2deb3ee00de415fb1a3965b45a4cac22023-09-02T08:51:43ZengWileyIET Power Electronics1755-45351755-45432023-09-0116122034204410.1049/pel2.12523A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modulesWuyu Zhang0Lei Qi1Xiangyu Zhang2Bing Ji3Xiang Cui4School of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaDepartment of Engineering University of Leicester Leicester United KingdomSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaAbstract Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub‐modules (SMs) condition monitoring. This paper proposes an integrated monitoring method for capacitance degradation and IGBT junction temperature variation. By measuring multiple characteristics of the same port voltage, the capacitance and the junction temperature can be obtained simultaneously, which greatly simplifies the measurement unit required for condition evaluation and realizes the submodule‐level condition monitoring at a lower cost. The capacitance is characterized by voltage changes during capacitor discharging and the junction temperature is monitored by capacitor voltage overshoot (peak value) during IGBT turn‐off. Theoretical analysis and experimental results verify the effectiveness of the proposed method and articulated the influence of load current, SM capacitor pre‐discharge voltage, and junction temperature. Moreover, an online data‐acquisition circuit for time‐specific capacitor voltage characterization is devised.https://doi.org/10.1049/pel2.12523capacitancecondition monitoringinsulated gate bipolar transistors |
| spellingShingle | Wuyu Zhang Lei Qi Xiangyu Zhang Bing Ji Xiang Cui A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules IET Power Electronics capacitance condition monitoring insulated gate bipolar transistors |
| title | A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules |
| title_full | A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules |
| title_fullStr | A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules |
| title_full_unstemmed | A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules |
| title_short | A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules |
| title_sort | novel integrated monitoring method for mppf capacitor and igbt junction temperature of half bridge modules |
| topic | capacitance condition monitoring insulated gate bipolar transistors |
| url | https://doi.org/10.1049/pel2.12523 |
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