Magnetron sputtering deposition of Zn/AZO multilayer films: Towards the understanding of Zn diffusion in AZO film
The substrate/(200–900 nm) Al:ZnO (AZO)/15 nm Zn films were deposited on glass substrates at room temperature by magnetron sputtering, followed by a face-to-face annealing in vacuum. The effect of AZO thickness and the annealing treatment on the structure, morphology and electrical properties of the...
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| Format: | Article |
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Elsevier
2019-06-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379719307491 |
| _version_ | 1818047163501903872 |
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| author | Yang Liu Siming Zhu Baokun Song |
| author_facet | Yang Liu Siming Zhu Baokun Song |
| author_sort | Yang Liu |
| collection | DOAJ |
| description | The substrate/(200–900 nm) Al:ZnO (AZO)/15 nm Zn films were deposited on glass substrates at room temperature by magnetron sputtering, followed by a face-to-face annealing in vacuum. The effect of AZO thickness and the annealing treatment on the structure, morphology and electrical properties of the bilayer films was discussed. All the samples show a hexagonal wurtzite structure with (0 0 2) preferred orientation and the annealed samples have a uniform surface morphology and low surface roughness (∼1 nm). Compared with as-deposited films, annealed films present a significant increase in the carrier concentration, which can be attributed to the effective elimination of Zn-vacancy defects by successfully introducing Zn atoms into AZO layers. The lowest resistivity of 3.36 × 10−4 Ω cm with carrier concentration of 1.67 × 1021 cm−3 can be obtained. In addition, based on the results of above experiments, the Zn + AZO multilayer films with four different Zn diffusion models were fabricated. The average visible transmittance of the films is in the range of 79.1–85.2%. The substrate/AZO/Zn model has the optimum electrical performance, while the substrate/AZO/Zn/AZO model exhibits the highest optoelectronic figure of merit of 3.47 × 103 Ω−1 cm−1. Keywords: Aluminum doped zinc oxide thin films, Magnetron sputtering, Zinc diffusion, Optoelectronic properties |
| first_indexed | 2024-12-10T10:01:25Z |
| format | Article |
| id | doaj.art-e2df9094f7964ddba5bf22f604df5325 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-10T10:01:25Z |
| publishDate | 2019-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-e2df9094f7964ddba5bf22f604df53252022-12-22T01:53:21ZengElsevierResults in Physics2211-37972019-06-0113Magnetron sputtering deposition of Zn/AZO multilayer films: Towards the understanding of Zn diffusion in AZO filmYang Liu0Siming Zhu1Baokun Song2School of Chemistry and Materials Science, Hubei Engineering University, Xiaogan 432000, China; Huazhong University of Science and Technology, Wuhan 430074, China; Corresponding author at: School of Chemistry and Materials Science, Hubei Engineering University, Xiaogan 432000, China.Huazhong University of Science and Technology, Wuhan 430074, ChinaHuazhong University of Science and Technology, Wuhan 430074, ChinaThe substrate/(200–900 nm) Al:ZnO (AZO)/15 nm Zn films were deposited on glass substrates at room temperature by magnetron sputtering, followed by a face-to-face annealing in vacuum. The effect of AZO thickness and the annealing treatment on the structure, morphology and electrical properties of the bilayer films was discussed. All the samples show a hexagonal wurtzite structure with (0 0 2) preferred orientation and the annealed samples have a uniform surface morphology and low surface roughness (∼1 nm). Compared with as-deposited films, annealed films present a significant increase in the carrier concentration, which can be attributed to the effective elimination of Zn-vacancy defects by successfully introducing Zn atoms into AZO layers. The lowest resistivity of 3.36 × 10−4 Ω cm with carrier concentration of 1.67 × 1021 cm−3 can be obtained. In addition, based on the results of above experiments, the Zn + AZO multilayer films with four different Zn diffusion models were fabricated. The average visible transmittance of the films is in the range of 79.1–85.2%. The substrate/AZO/Zn model has the optimum electrical performance, while the substrate/AZO/Zn/AZO model exhibits the highest optoelectronic figure of merit of 3.47 × 103 Ω−1 cm−1. Keywords: Aluminum doped zinc oxide thin films, Magnetron sputtering, Zinc diffusion, Optoelectronic propertieshttp://www.sciencedirect.com/science/article/pii/S2211379719307491 |
| spellingShingle | Yang Liu Siming Zhu Baokun Song Magnetron sputtering deposition of Zn/AZO multilayer films: Towards the understanding of Zn diffusion in AZO film Results in Physics |
| title | Magnetron sputtering deposition of Zn/AZO multilayer films: Towards the understanding of Zn diffusion in AZO film |
| title_full | Magnetron sputtering deposition of Zn/AZO multilayer films: Towards the understanding of Zn diffusion in AZO film |
| title_fullStr | Magnetron sputtering deposition of Zn/AZO multilayer films: Towards the understanding of Zn diffusion in AZO film |
| title_full_unstemmed | Magnetron sputtering deposition of Zn/AZO multilayer films: Towards the understanding of Zn diffusion in AZO film |
| title_short | Magnetron sputtering deposition of Zn/AZO multilayer films: Towards the understanding of Zn diffusion in AZO film |
| title_sort | magnetron sputtering deposition of zn azo multilayer films towards the understanding of zn diffusion in azo film |
| url | http://www.sciencedirect.com/science/article/pii/S2211379719307491 |
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