Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> Stacked Gate Dielectrics

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> Stacked Gate Dielectrics

A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase hi...

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Bibliographic Details
Main Authors: Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee, Yeong-Her Wang
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Materials
Subjects:
metal-oxide-semiconductor (MOS)
high-electron-mobility transistor (HEMT)
Al<sub>2</sub>O<sub>3</sub>
ZrO<sub>2</sub>
Online Access:https://www.mdpi.com/1996-1944/15/19/6895

Internet

https://www.mdpi.com/1996-1944/15/19/6895

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