Effect of the RF Power of PECVD on the Crystalline Fractions of Microcrystalline Silicon (μc-Si:H) Films and Their Structural, Optical, and Electronic Properties

Effect of the RF Power of PECVD on the Crystalline Fractions of Microcrystalline Silicon (μc-Si:H) Films and Their Structural, Optical, and Electronic Properties

In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH<sub>4</sub>), hydrogen (H<sub>2</sub>), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly, we st...

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Những tác giả chính: Mario Moreno, Arturo Torres-Sánchez, Pedro Rosales, Alfredo Morales, Alfonso Torres, Javier Flores, Luis Hernández, Carlos Zúñiga, Carlos Ascencio, Alba Arenas
Định dạng: Bài viết
Ngôn ngữ:English
Được phát hành: MDPI AG 2023-06-01
Loạt:Electronic Materials
Những chủ đề:
microcrystalline silicon
plasma-enhanced chemical vapor deposition
transmission electron microscopy
scanning electron microscopy
Truy cập trực tuyến:https://www.mdpi.com/2673-3978/4/3/9

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https://www.mdpi.com/2673-3978/4/3/9

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