Modelling of GaN high electron mobility transistor on diamond substrate

Modelling of GaN high electron mobility transistor on diamond substrate

Abstract A reliable small‐signal modelling approach has been developed and applied on GaN‐on‐diamond high electron mobility transistor. The extrinsic elements' extraction procedure was improved to provide an accurate characterization for the quasistatic behaviour of the intrinsic transistor. Th...

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Bibliographic Details
Main Authors: Anwar Jarndal, Xuekun Du, Yuehang Xu
Format: Article
Language:English
Published: Wiley 2021-05-01
Series:IET Microwaves, Antennas & Propagation
Subjects:
diamond
elemental semiconductors
gallium compounds
high electron mobility transistors
III‐V semiconductors
S‐parameters
Online Access:https://doi.org/10.1049/mia2.12093

Internet

https://doi.org/10.1049/mia2.12093

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