Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform

Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform

The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range center...

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Bibliographic Details
Main Authors: Sittig Robert, Nawrath Cornelius, Kolatschek Sascha, Bauer Stephanie, Schaber Richard, Huang Jiasheng, Vijayan Ponraj, Pruy Pascal, Portalupi Simone Luca, Jetter Michael, Michler Peter
Format: Article
Language:English
Published: De Gruyter 2022-02-01
Series:Nanophotonics
Subjects:
1550 nm
metamorphic buffer
optical resonators
quantum dots
Online Access:https://doi.org/10.1515/nanoph-2021-0552

Internet

https://doi.org/10.1515/nanoph-2021-0552

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