Emitter doping influence on electrical performance of C-Si cells under concentrated light
In the present work we have investigated the influence of the emitter doping on the cell performance of c-Si devices at one sun and under concentrated light. We have realized different devices using FZ p-type Boron doped wafers and varying the sheet resistance of the emitters aiming at analyzing the...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007-05-01
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| Series: | Moldavian Journal of the Physical Sciences |
| Online Access: | https://mjps.nanotech.md/archive/2007/article/3729 |