The nature of column boundaries in micro-structured silicon oxide nanolayers
Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers. Using TEM measurements, we analyze SiOx layers in Me...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0073349 |