The nature of column boundaries in micro-structured silicon oxide nanolayers
Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers. Using TEM measurements, we analyze SiOx layers in Me...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-12-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0073349 |
| _version_ | 1818365738051698688 |
|---|---|
| author | K. Patel J. Cottom A. Mehonic W. H. Ng A. J. Kenyon M. Bosman A. L. Shluger |
| author_facet | K. Patel J. Cottom A. Mehonic W. H. Ng A. J. Kenyon M. Bosman A. L. Shluger |
| author_sort | K. Patel |
| collection | DOAJ |
| description | Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers. Using TEM measurements, we analyze SiOx layers in Me–SiOx–Mo heterostructures, where Me = Ti or Au/Ti. We show that the SiOx layers are templated by the Mo surface roughness, leading to the formation of columnar boundaries protruding from troughs at the SiOx/Mo interface. Electron energy-loss spectroscopy measurements show that these boundaries are best characterized as voids, which in turn facilitate Ti, Mo, and Au incorporation from the electrodes into SiOx. Density functional theory calculations of a simple model of the SiO2 grain boundary and column boundary show that O interstitials preferentially reside at the boundaries rather than in the SiO2 bulk. The results elucidate the nature of the SiOx microstructure and the complex interactions between the metal electrodes and the switching oxide, each of which is critically important for further materials engineering and the optimization of ReRAM devices. |
| first_indexed | 2024-12-13T22:25:02Z |
| format | Article |
| id | doaj.art-e389a848c3e24c598bd688eef42701f0 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-13T22:25:02Z |
| publishDate | 2021-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-e389a848c3e24c598bd688eef42701f02022-12-21T23:29:15ZengAIP Publishing LLCAPL Materials2166-532X2021-12-01912121107121107-1010.1063/5.0073349The nature of column boundaries in micro-structured silicon oxide nanolayersK. Patel0J. Cottom1A. Mehonic2W. H. Ng3A. J. Kenyon4M. Bosman5A. L. Shluger6Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United KingdomDepartment of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United KingdomDepartment of Electronic and Electrical Engineering, University College London, Gower Street, London WC1E 6BT, United KingdomDepartment of Electronic and Electrical Engineering, University College London, Gower Street, London WC1E 6BT, United KingdomDepartment of Electronic and Electrical Engineering, University College London, Gower Street, London WC1E 6BT, United KingdomInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Singapore 138634, SingaporeDepartment of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United KingdomColumnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers. Using TEM measurements, we analyze SiOx layers in Me–SiOx–Mo heterostructures, where Me = Ti or Au/Ti. We show that the SiOx layers are templated by the Mo surface roughness, leading to the formation of columnar boundaries protruding from troughs at the SiOx/Mo interface. Electron energy-loss spectroscopy measurements show that these boundaries are best characterized as voids, which in turn facilitate Ti, Mo, and Au incorporation from the electrodes into SiOx. Density functional theory calculations of a simple model of the SiO2 grain boundary and column boundary show that O interstitials preferentially reside at the boundaries rather than in the SiO2 bulk. The results elucidate the nature of the SiOx microstructure and the complex interactions between the metal electrodes and the switching oxide, each of which is critically important for further materials engineering and the optimization of ReRAM devices.http://dx.doi.org/10.1063/5.0073349 |
| spellingShingle | K. Patel J. Cottom A. Mehonic W. H. Ng A. J. Kenyon M. Bosman A. L. Shluger The nature of column boundaries in micro-structured silicon oxide nanolayers APL Materials |
| title | The nature of column boundaries in micro-structured silicon oxide nanolayers |
| title_full | The nature of column boundaries in micro-structured silicon oxide nanolayers |
| title_fullStr | The nature of column boundaries in micro-structured silicon oxide nanolayers |
| title_full_unstemmed | The nature of column boundaries in micro-structured silicon oxide nanolayers |
| title_short | The nature of column boundaries in micro-structured silicon oxide nanolayers |
| title_sort | nature of column boundaries in micro structured silicon oxide nanolayers |
| url | http://dx.doi.org/10.1063/5.0073349 |
| work_keys_str_mv | AT kpatel thenatureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT jcottom thenatureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT amehonic thenatureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT whng thenatureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT ajkenyon thenatureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT mbosman thenatureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT alshluger thenatureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT kpatel natureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT jcottom natureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT amehonic natureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT whng natureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT ajkenyon natureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT mbosman natureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers AT alshluger natureofcolumnboundariesinmicrostructuredsiliconoxidenanolayers |