Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (<i>τ</i><sub>PL</sub>), and electron spin relaxation times (<i>τ</i><sub>s</sub>) in (110) GaAs/AlGaAs multiple quantum wells (M...

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Bibliographic Details
Main Authors: Satoshi Iba, Ryogo Okamoto, Koki Obu, Yuma Obata, Yuzo Ohno
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Micromachines
Subjects:
molecular beam epitaxy
GaAs (110)
photoluminescence
spin relaxation
Online Access:https://www.mdpi.com/2072-666X/12/9/1112

Internet

https://www.mdpi.com/2072-666X/12/9/1112

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