| Summary: | We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (<i>τ</i><sub>PL</sub>), and electron spin relaxation times (<i>τ</i><sub>s</sub>) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature <i>T</i><sub>g</sub> (430–600 °C) and a high V/III flux ratio using As<sub>2</sub>. At 530 °C < <i>T</i><sub>g</sub> < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in <i>τ</i><sub>PL</sub>~40 ns at RT, one order of magnitude longer than those reported so far. Long <i>τ</i><sub>s</sub> (~6 ns) is also observed at RT.
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