Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space
Radiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging in multiple NASA and commercial applications. In this paper, we develop a model of detector quantum efficiency (QE) as a function of Si–SiO<sub>2</sub> interface and oxide trap...
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MDPI AG
2023-12-01
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Series: | Sensors |
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Online Access: | https://www.mdpi.com/1424-8220/23/24/9857 |
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author | Michael E. Hoenk April D. Jewell Gillian Kyne John Hennessy Todd Jones Charles Shapiro Nathan Bush Shouleh Nikzad David Morris Katherine Lawrie Jesper Skottfelt |
author_facet | Michael E. Hoenk April D. Jewell Gillian Kyne John Hennessy Todd Jones Charles Shapiro Nathan Bush Shouleh Nikzad David Morris Katherine Lawrie Jesper Skottfelt |
author_sort | Michael E. Hoenk |
collection | DOAJ |
description | Radiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging in multiple NASA and commercial applications. In this paper, we develop a model of detector quantum efficiency (QE) as a function of Si–SiO<sub>2</sub> interface and oxide trap densities to analyze the performance of silicon detectors and explore the requirements for stable, radiation-hardened surface passivation. By analyzing QE data acquired before, during, and after, exposure to damaging UV radiation, we explore the physical and chemical mechanisms underlying UV-induced surface damage, variable surface charge, QE, and stability in ion-implanted and delta-doped detectors. Delta-doped CCD and CMOS image sensors are shown to be uniquely hardened against surface damage caused by ionizing radiation, enabling the stability and photometric accuracy required by NASA for exoplanet science and time domain astronomy. |
first_indexed | 2024-03-08T20:22:31Z |
format | Article |
id | doaj.art-e3d54c54ebac4d1fa97b8414b874f33f |
institution | Directory Open Access Journal |
issn | 1424-8220 |
language | English |
last_indexed | 2024-03-08T20:22:31Z |
publishDate | 2023-12-01 |
publisher | MDPI AG |
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series | Sensors |
spelling | doaj.art-e3d54c54ebac4d1fa97b8414b874f33f2023-12-22T14:41:11ZengMDPI AGSensors1424-82202023-12-012324985710.3390/s23249857Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in SpaceMichael E. Hoenk0April D. Jewell1Gillian Kyne2John Hennessy3Todd Jones4Charles Shapiro5Nathan Bush6Shouleh Nikzad7David Morris8Katherine Lawrie9Jesper Skottfelt10Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USAJet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USAJet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USAJet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USAJet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USAJet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USAJet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USAJet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USATeledyne e2v, Chelmsford CM1 2QU, UKTeledyne e2v, Chelmsford CM1 2QU, UKCentre for Electronic Imaging, School of Physical Sciences, The Open University, Milton Keynes MK7 6AA, UKRadiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging in multiple NASA and commercial applications. In this paper, we develop a model of detector quantum efficiency (QE) as a function of Si–SiO<sub>2</sub> interface and oxide trap densities to analyze the performance of silicon detectors and explore the requirements for stable, radiation-hardened surface passivation. By analyzing QE data acquired before, during, and after, exposure to damaging UV radiation, we explore the physical and chemical mechanisms underlying UV-induced surface damage, variable surface charge, QE, and stability in ion-implanted and delta-doped detectors. Delta-doped CCD and CMOS image sensors are shown to be uniquely hardened against surface damage caused by ionizing radiation, enabling the stability and photometric accuracy required by NASA for exoplanet science and time domain astronomy.https://www.mdpi.com/1424-8220/23/24/9857CMOS image sensorsdelta-doped CCDradiation damagestabilityimage sensordelta-doped silicon |
spellingShingle | Michael E. Hoenk April D. Jewell Gillian Kyne John Hennessy Todd Jones Charles Shapiro Nathan Bush Shouleh Nikzad David Morris Katherine Lawrie Jesper Skottfelt Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space Sensors CMOS image sensors delta-doped CCD radiation damage stability image sensor delta-doped silicon |
title | Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space |
title_full | Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space |
title_fullStr | Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space |
title_full_unstemmed | Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space |
title_short | Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space |
title_sort | surface passivation by quantum exclusion on the quantum efficiency and stability of delta doped ccds and cmos image sensors in space |
topic | CMOS image sensors delta-doped CCD radiation damage stability image sensor delta-doped silicon |
url | https://www.mdpi.com/1424-8220/23/24/9857 |
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