Introducing an n-type electron deceleration layer to enhance the luminous efficiency of AlGaN-based DUV-LEDs

Introducing an n-type electron deceleration layer to enhance the luminous efficiency of AlGaN-based DUV-LEDs

The internal quantum efficiency (IQE) of conventional AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is seriously limited by the poor and inhomogeneous carrier injection. The typical solution is to optimize the structure parameters of p-type region and active region. In this work, h...

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Bibliographic Details
Main Authors: Qiao Wang, Kang Zhang, Dan Lin, Xihui Liang, Yunzhou Liu, Shan Zhang, Hualong Wu, Wei Zhao
Format: Article
Language:English
Published: Frontiers Media S.A. 2023-01-01
Series:Frontiers in Physics
Subjects:
DUV-LEDs
AlGaN
light output power
inhomogeneous carrier distribution
internal quantum efficiency
Online Access:https://www.frontiersin.org/articles/10.3389/fphy.2023.1118946/full

Internet

https://www.frontiersin.org/articles/10.3389/fphy.2023.1118946/full

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