Introducing an n-type electron deceleration layer to enhance the luminous efficiency of AlGaN-based DUV-LEDs
The internal quantum efficiency (IQE) of conventional AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is seriously limited by the poor and inhomogeneous carrier injection. The typical solution is to optimize the structure parameters of p-type region and active region. In this work, h...
| Главные авторы: | , , , , , , , |
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| Формат: | Статья |
| Язык: | English |
| Опубликовано: |
Frontiers Media S.A.
2023-01-01
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| Серии: | Frontiers in Physics |
| Предметы: | |
| Online-ссылка: | https://www.frontiersin.org/articles/10.3389/fphy.2023.1118946/full |