Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys

Abstract The spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a sufficiently low writing energy and high annealing stability for t...

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Bibliographic Details
Main Authors: Yuki Hibino, Tatsuya Yamamoto, Kay Yakushiji, Tomohiro Taniguchi, Hitoshi Kubota, Shinji Yuasa
Format: Article
Language:English
Published: Wiley-VCH 2024-03-01
Series:Advanced Electronic Materials
Subjects:
amorphous materials
magnetic random access memory (MRAM)
magnetic tunnel junction
spin hall effect
spin‐orbit torque
Online Access:https://doi.org/10.1002/aelm.202300581

Internet

https://doi.org/10.1002/aelm.202300581

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