Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys
Abstract The spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a sufficiently low writing energy and high annealing stability for t...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-03-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300581 |
| _version_ | 1797270042308509696 |
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| author | Yuki Hibino Tatsuya Yamamoto Kay Yakushiji Tomohiro Taniguchi Hitoshi Kubota Shinji Yuasa |
| author_facet | Yuki Hibino Tatsuya Yamamoto Kay Yakushiji Tomohiro Taniguchi Hitoshi Kubota Shinji Yuasa |
| author_sort | Yuki Hibino |
| collection | DOAJ |
| description | Abstract The spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a sufficiently low writing energy and high annealing stability for the semiconductor integration process. Thus far, none of the crystalline‐based spin Hall materials are able to satisfy these requirements. Here, a promising solution for SOT‐MRAMs is provided using amorphous W─Ta─B alloys. Even without a long‐range crystal order, W─Ta─B alloys exhibit both large effective spin Hall angles up to 40% derived from a Ta substitutional doping and superior annealing stability (up to 400 °C) due to the addition of B, enabling them to satisfy both requirements. Nanoscale three‐terminal SOT‐MRAM cells are fabricated, and these are demonstrated to have high magnetoresistance ratios (up to 130%) and extremely low intrinsic switching current densities (down to 4 × 106 A cm−2). These results show that amorphous spin Hall materials can provide the key for realizing high‐performance SOT‐MRAMs. |
| first_indexed | 2024-04-25T01:57:58Z |
| format | Article |
| id | doaj.art-e3ff599eefef479eba3e9534646e77a3 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-04-25T01:57:58Z |
| publishDate | 2024-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-e3ff599eefef479eba3e9534646e77a32024-03-07T15:46:04ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-03-01103n/an/a10.1002/aelm.202300581Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B AlloysYuki Hibino0Tatsuya Yamamoto1Kay Yakushiji2Tomohiro Taniguchi3Hitoshi Kubota4Shinji Yuasa5National Institute of Advanced Industrial Science and Technology (AIST) Research Center for Emerging Computing Technologies (RCECT) Tsukuba Ibaraki 305–8568 JapanNational Institute of Advanced Industrial Science and Technology (AIST) Research Center for Emerging Computing Technologies (RCECT) Tsukuba Ibaraki 305–8568 JapanNational Institute of Advanced Industrial Science and Technology (AIST) Research Center for Emerging Computing Technologies (RCECT) Tsukuba Ibaraki 305–8568 JapanNational Institute of Advanced Industrial Science and Technology (AIST) Research Center for Emerging Computing Technologies (RCECT) Tsukuba Ibaraki 305–8568 JapanNational Institute of Advanced Industrial Science and Technology (AIST) Research Center for Emerging Computing Technologies (RCECT) Tsukuba Ibaraki 305–8568 JapanNational Institute of Advanced Industrial Science and Technology (AIST) Research Center for Emerging Computing Technologies (RCECT) Tsukuba Ibaraki 305–8568 JapanAbstract The spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a sufficiently low writing energy and high annealing stability for the semiconductor integration process. Thus far, none of the crystalline‐based spin Hall materials are able to satisfy these requirements. Here, a promising solution for SOT‐MRAMs is provided using amorphous W─Ta─B alloys. Even without a long‐range crystal order, W─Ta─B alloys exhibit both large effective spin Hall angles up to 40% derived from a Ta substitutional doping and superior annealing stability (up to 400 °C) due to the addition of B, enabling them to satisfy both requirements. Nanoscale three‐terminal SOT‐MRAM cells are fabricated, and these are demonstrated to have high magnetoresistance ratios (up to 130%) and extremely low intrinsic switching current densities (down to 4 × 106 A cm−2). These results show that amorphous spin Hall materials can provide the key for realizing high‐performance SOT‐MRAMs.https://doi.org/10.1002/aelm.202300581amorphous materialsmagnetic random access memory (MRAM)magnetic tunnel junctionspin hall effectspin‐orbit torque |
| spellingShingle | Yuki Hibino Tatsuya Yamamoto Kay Yakushiji Tomohiro Taniguchi Hitoshi Kubota Shinji Yuasa Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys Advanced Electronic Materials amorphous materials magnetic random access memory (MRAM) magnetic tunnel junction spin hall effect spin‐orbit torque |
| title | Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys |
| title_full | Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys |
| title_fullStr | Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys |
| title_full_unstemmed | Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys |
| title_short | Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys |
| title_sort | highly energy efficient spin orbit torque magnetoresistive memory with amorphous w─ta─b alloys |
| topic | amorphous materials magnetic random access memory (MRAM) magnetic tunnel junction spin hall effect spin‐orbit torque |
| url | https://doi.org/10.1002/aelm.202300581 |
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