Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data

Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data

As the technology node shrinks and shifts towards complex architectures, accurate control of automated semiconductor manufacturing processes, particularly plasma etching, is crucial in yield, cost, and semiconductor performance. However, current endpoint detection (EPD) methods relying on the experi...

Full description

Bibliographic Details
Main Authors: Bobae Kim, Sungbin Im, Geonwook Yoo
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Electronics
Subjects:
end point detection
plasma etching
CNN
SVM
adaboost ensemble
Online Access:https://www.mdpi.com/2079-9292/10/1/49

Internet

https://www.mdpi.com/2079-9292/10/1/49

Similar Items