Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that...

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Bibliographic Details
Main Authors: Tarek A. Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, Yuling Hsueh, James Charles, Jim Fonseca, Michael Povolotskyi, Jun Oh Kim, Sanjay Krishna, Monica S. Allen, Jeffery W. Allen, Rajib Rahman, Gerhard Klimeck
Format: Article
Language:English
Published: Beilstein-Institut 2018-04-01
Series:Beilstein Journal of Nanotechnology
Subjects:
anharmonic atomistic strain model
biaxial strain ratio
configuration interaction
optical absorption
quantum qot filling
self-assembled quantum dots
semi-empirical tight-binding
sp3d5s* with spin–orbit coupling (sp3d5s*_SO)
Online Access:https://doi.org/10.3762/bjnano.9.99

Internet

https://doi.org/10.3762/bjnano.9.99

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