Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD
We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2020-07-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/58860/download/pdf/ |