Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation
Abstract A comparison study on electrical performance of Ge pMOSFETs with a GeO x passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O3/n-Ge (001) substrate followed by a 5-nm HfO2 gate dielectric in situ deposit...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2019-04-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-019-2958-2 |