New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives
The drive inverter represents a central component of an electric vehicle (EV) drive train, being responsible for the DC/AC power conversion between the battery and the electrical machine. In this context, novel converter topologies adopting modern 600/650V wide bandgap (WBG) semiconductor devices wi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9773161/ |