Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Abstract HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small compared to other Hf‐based ferroelectric films at low annealing temperatures. In order to further improve the remnan...

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Bibliographic Details
Main Authors: Yongkai Liu, Tianyu Wang, Zhenhai Li, Jiajie Yu, Jialin Meng, Kangli Xu, Pei Liu, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
Format: Article
Language:English
Published: Wiley-VCH 2023-08-01
Series:Advanced Electronic Materials
Subjects:
HfAlO
ZrO2
ferroelectric enhancement
regulating layers
Online Access:https://doi.org/10.1002/aelm.202300208

Internet

https://doi.org/10.1002/aelm.202300208

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