Bandgap modulated phosphorene based gate drain underlap double-gate TFET

In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material Phosphorene. An artificial hetero-junction between...

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Bibliographic Details
Main Authors: Md. Abdullah-Al-Kaiser, Dip Joti Paul, Quazi D. M. Khosru
Format: Article
Language:English
Published: AIP Publishing LLC 2018-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5049611