Bandgap modulated phosphorene based gate drain underlap double-gate TFET
In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material Phosphorene. An artificial hetero-junction between...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-09-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5049611 |
| Summary: | In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material Phosphorene. An artificial hetero-junction between the source and channel region is composed of trilayer and bi-layer Phosphorene respectively without any lattice mismatch. BM-GDU TFET exhibits ON-current ∼100 μA/μm, on-off ratio greater than 109 and average subthreshold swing 28.6 mV/decade for a channel length of 20 nm at VDD of 0.4 V due to its low bandgap at source region than the channel region, larger tunneling window and lower carrier effective mass. Gate drain underlap structure yields ∼10 decades ambipolar suppression than conventional homojunction DG TFET. Performance parameters of our BM-GDU TFET by varying channel length are also studied using our developed self-consistent quantum mechanical transport simulator. |
|---|---|
| ISSN: | 2158-3226 |