Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process

Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process

We have systematically examined electrical characteristics of ultra-thin body (UTB) (111) Ge-on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) fabricated by the smart-cut process and have compared their electrical properties with those of (100) ones. The (111...

Full description

Bibliographic Details
Main Authors: Cheol-Min Lim, Ziqiang Zhao, Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ge-on-insulator (GOI)
smart-cut technology
(111) surface orientation
MOSFETs
ultra-thin body (UTB)
Online Access:https://ieeexplore.ieee.org/document/9446534/

Internet

https://ieeexplore.ieee.org/document/9446534/

Similar Items