Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the...

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Bibliographic Details
Main Authors: Eugeny Ryndin, Natalia Andreeva, Victor Luchinin
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/13/1/98